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2A520A

Diodes 2A520A

2A520A, KA520A, KA520B

UHF switching silicon epitaxial diode with p-i-n structure.

Case type: metal-ceramic, mass not more than 1.3 g

Diodes are designed for use in S-band and L-band switching devices.

Main parameters

Parameter

2A520A, KA520A

KA520B

not less than

not more than

not less than

not more than

Breakdown voltage (at reverse current 100 mkA

800

600

Cut-off frequency (at forward current 100 mA, reverse voltage 100 V), GHz

200

150

Collected charge (at forward current 100 mA and reverse voltage impulse amplitude 300 V), nC

300

300

Forward loss resistance (at forward current 100 mA), Ohm

2

3

Total capacitance (at reverse voltage 100 V), pF

0.4

1.0

0.4

1.0

Case capacitance, pF

0.3

0.45

0.3

0.45

Marking

Diode type

Marking dots

2A520A

black, red

KA520A

black, red, green

KA520B

yellow, red, green

You can order 2A520A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com