168KT2B
4-channel analog switch for current and voltage.
Ambient air temperature -60..+100 oC
Case type:
401.14-5.07NB (nickel, marked as 168KT2T1VK)
401.14-5M (gold, marked as 168KT2TVK)
Dimensional outline U80.073.048GCh.
Mass not more than 1.0 g.
Main parameters (at +25±10 oC)
| Parameter | not less than | not more than |
| Threshold voltage (atUs= -5V, Is=0.01 mA) | 3 | 6 |
| Drain leakage current (atUs= -15V), nA | 20 | |
| Gate leakage current (atUs= -15V), nA | 20 | |
| Gate leakage current (atUs= -30 V), nA | 20 | |
| Turn-on time (atUs= -5V), mks | 0.3 | |
| Turn-off time (atUs= -5V), mks | 0.7 | |
| Drain-to-source resistance in open state (atUs=?5V, UD=0 V, UG=-15 V, Is=0.01 mA), Ohm | 100 |
Microcurcuit electrical parameters subject to change during lifetime and y-percentile storageability time (at +25±10oС)
| Drain leakage current, not more than, nA | 50 |
| Source leakage current, not more than, nA | 50 |
| Gate leakage current, not more than, nA | 100 |
| Drain-to-source resistance in open state, not more than, Ohm | 120 |
Operational limits
| Parameter | Edge operating conditions, not more than | Marginal conditions, not more than |
| Drain-to-substrate voltage, V | 15 | 29 |
| Source-to-substrate voltage, V | 15 | 29 |
| Gate-to-substrate voltage, V | 30 | 35 |
| Maximum switching current per gate, mA | 20 | 23 |
| Microcircuit power dissipation, mW | 100 | 173 |
Microcircuit is resistant to following environmental conditions
| Static potential, V | 100 |
| Diminished air pressure, Pa (mmHg) | 1.3?10-4 (10-6) |
| Elevated air pressure, kPa | 294 |
| Relative humidity at +35 oC | 98% |
| Temperature variation, oC | -60..+150 |
| Linear acceleration, m/s2 (g) | 5000 (50) |
| Sinusoidal vibration frequency, Hz acceleration, m/s2 (g) | 1..5000 400 (40) |
| Single mechanical impact acceleration, m/s2 (g) duration, ms | 15000 (1500) 0.1..2.0 |
| Multiple mechanical impacts acceleration, m/s2 (g) duration, ms | 1500 (150) 1..5 |
