KU108ZH is a PNPN diffused silicon reverse-blocking triode thyristor (silicon-controlled rectifier), designed for operation as a high power switching device.
Case: metal-ceramic.
Weight: less than 45 g;
complete with the clamping device and the radiator: less than 220 g.
Electrical Characteristics.
| On-state resistance at IT=5 А, less than |
| Peak on-state voltage at ITM=50 Аand IGTM=4.5 А, less than |
| Gate trigger peak voltage IGTM =4.5 А, less than |
| Gate non-trigger direct voltage, at least |
| Holding current VD=50 V, less than |
| Gate non-trigger direct current, at least |
| Direct off-state current at VD = VDM, less than |
| Direct reverse current at VR= VRM, less than |
| Turn-on time at VD = VDM, ITM =50 А, IGTM =4.5 А, dVD /dt=20 V/ µs, less than |
| Storage time at VD = VDM and ITM =50 А, less than |
| Rise time at VD = VDM and ITM =50 А, less than |
| Total capacity at VD =600 V, less than |
Limiting Values:
| Сontinuous off-state voltage | 1000 V |
| Сontinuous reverse voltage | 500 V |
| Minimum off-state voltage | 25 V |
| Сontinuous reverse gate voltage | 0.5 V |
| Off-state voltage rise rate | 20 V/µs |
| Peak on-state current | 150 А |
| Minimum peak on-state current | 2 А |
| On-state current rise rate | 500 А/µs |
| Peak forward gate current | 4.5 А |
| Forward gate current rise rate | 45 А/µs |
| Gate current pulse duration time | 0.8...2 µs |
| Pulse repetition frequency at the on-state current duration of 0.55 µs | 2000 Hz |
| On-state current pulse duration | 0.5 µs |
| Peak gate power dissipation | 150 W |
| Junction-to-case thermal resistance, less than | 6°С/W |
| Ambient temperature | -40...+80°С |
