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2P303G

2P303G

Silicon epitaxial-planar field-effect transistor with p-n gate and n-channel.Designed for use in charge-sensitive amplifiers and other nuclear spectrometry devices.

Case type: KT-1-12, metal-glass with flexible terminals

Device type is indicated on its case

Technical requirement version AEYaR,432140.203 TU

Main parameters

Maximum power dissipation, mW

200

Cut-off voltage (gate-to-source), V

<8

Maximum source-to-drain voltage, V

25

Maximum gate-to-drain voltage, V

30

Maximum gate-to-source voltage, V

30

Drain constant current, mA

20

Drain initial current, mA

3..12

Gate leakage current, nA

<1

Mutual transconductance, mA/V

3..7

Input capacitance (gate-to-source), pF

<6

Feedback capacitance (common-source circuit with input short-circuit, AC), pF

<2

Ambient air temperature, oC

-60..+125

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