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2T203A

Transistors

Silicon epitaxial-planar with p-n-p structure, amplifying transistors.
Transistors 2Т203А, 2Т203B, 2Т203V, 2Т203G, 2Т203D are designed for application in amplifiers and pulse devices.
Transistors are produced in metal-glass casing with flexible leads.
Device type is marked on casing.
Maximum weight 0,5 g.
Casing type: KТ-1-7.

Characteristics of transistors 2Т203А, 2Т203B, 2Т203V, 2Т203G, 2Т203D:

Transistor type

Structure

Parameters maximum values at Тp=25°С

Parameters values at Тp=25°С

Tp
max

Т
max

Ik
max

Ik. I.
max

UkeR max
(UkЭ0 max)

UkБ0 max

Ueb0 max

Рkmax

h21E

Uke
sat.

IkbО

IebО

f l.

KSH

SK

SE

V

V

V

mW

V

mcА

mcА

MHz

dB

pF

pF

°С

°С

2Т203А

p-n-p

10

50

60

60

30

150

>9

0,5

1

-

>5

-

10

-

150

-60…+125

2Т203B

p-n-p

10

50

30

30

15

150

30…90

1

1

-

>5

-

10

-

150

-60…+125

2Т203V

p-n-p

10

50

15

15

10

150

15…100

0,5

1

-

>5

-

10

-

150

-60…+125

2Т203G

p-n-p

10

50

60

60

30

150

>40

0,5

1

-

>10

-

10

-

150

-60…+125

2Т203D

p-n-p

10

50

15

15

10

150

60…200

0,35

1

-

>10

-

10

-

150

-60…+125

You can order 2T203A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com