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2T704B

2T704B

Impulse n-p-n silicon mesaplanar transistor for use in high-voltage impulse modulators.

Transistors are produced in a metal-ceramic case with hard terminals and screw.

Transistor type is marked on its case. Emitter terminal is marked with a dot.

Mass not more than 20 g

Case type: KT-10

Main parameters

Structure

n-p-n

Maximum constant collector current, A

2.5

Maximum impulse collector current, A

4

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

400

Maximum emitter-to base voltage at zero collector current, A

4

Maximum collector power dissipation, W

15

Static current transfer coefficient

10..100

Collector-to-emitter saturation voltage, V

5

Collector reverse current, mA

5

Emitter reverse current, mA

100

Beta cutoff, MHz

3

Maximum junction temperature, oC

125

Ambient air temperature, oC

-60..+125

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