2T708B

Silicone Mesaplanar Composite Switching Transistor with p-n-p structure.

Designed for amplifiers and switching devices.

Manufactured in metal package with glass insulators and flexible lead.

Transistor type is stated on the package.

Max weight 2 g

Main technical characteristics:
• Structure: p-n-p
• Р_{c max} – Total heat sink collector dissipation: 5 W;
•f_c – Cutoff frequency of a common-emitter amplifier: min 3 MHz;
• U_{cer max} – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 80 V;
• U_{ebo max} – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 5 V;
• I_{c max} – Maximum direct current rating of a collector: 2,5 A;

• h₂₁ - Static value of the forward current transfer ratio for common-emitter amplifier: min 750