2T827A

Silicon epitaxial amplifying transistors with n-p-n structure.
Transistors are designed for application in amplifiers of low frequency, current and voltage stabilizers, pulse amplifiers of power, switching devices, electronic systems of control, protection and automatics. Transistors 2Т827А, 2Т827B, 2Т827V are produced in metal case with glass insulators and stiff leads.

Transistor weight in metal case – maximum 20 g.

Basic technical characteristics of transistors 2Т827А:
• Transistor structure: n-p-n;
• Рc h max – Constant dissipated power of collector with heatsink: 125 Vt;
• fgr – Limit frequency of current transmitting coefficient for circuits with common emitter: minimum 4 MHz;
• Ucer max – Maximum voltage collector – emitter at given current of collector and given resistance in base-emitter circuit: 100 V (1kOm);
• Uebo max – Maximum voltage emitter – base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – Maximum constant current of collector: 20 А;
• Ic p max - Maximum pulse current of collector: 40 А;
• Icer – Reverse current collector – emitter at given voltage collector – emitter and resistance in circuit base-emitter: 3 mА(100V);
• h21e – Static coefficient of current transmitting for circuits with common emitter: 750... 18000;
• Сc – Collector junction capacitance: maximum 400 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 0,2 Om

Technical characteristics of transistors 2Т827А, 2Т827B, 2Т827V, 2Т827А-5: