MP10B

Transistors

Transistors MP10, MP10А, MP10B are germanium alloy n-p-n amplifying low frequency with unrationed noise coefficient.
Transistors are designed for amplifying low frequency signals.
Transistors are produced in metal glass case with flexible lead-outs.
Transistor maximum weight2 g.

Basic technical characteristics of transistors MP10B:
• Transistor structure: n-p-n
• Рc max – Constant dissipated power of collector: 150 mVt;
• fh21b – Limit frequency of transistor current transmitting coefficient for circuits with common emitter and common base: minimum 1 MHz;
• Ucbo dis – Disruption voltage collector-base at given reverse current and open circuit of emitter: 15 V;
• Uebo dis – Disruption voltage emitter-base at given reverse current of emitter and open circuit of collector: 15 V;
• Ic max – Maximum constant current of collector: 20 mA;
• Icbo – Collector reverse current: maximum 50 mcA;
• h21e – Static coefficient of current transmitting of transistor in small signal mode for circuits with common emitter and common base correspondingly: 25...50;
• Сc – Collector junction capacitance: maximum 60 pF;
• tc – Time constant of feedback circuit at high frequency: maximum 5000ps;
• Csh – Transistor noise coefficient: maximum 10 dB with frequency 1 kHz

Technical characteristics of transistors MP10, MP10А, MP10B, MP11, MP11А: