P306A
Germanium alloy p-n-p universal transistor for switching devices, low frequency amplifier output stages, DC voltage converters.
Case type: metal-glass with hard terminals.
Mass not more than 10 g
Technical parameters
| Structure | p-n-p |
| Maximum allowed collector constant current, A | 0.4 |
| Maximum allowed collector-to-emitter voltage at given collector current and emitter-to-base circuit resistance, V | 60 |
| Maximum allowed emitter-to-base constant voltage at zero collector current, V | 60 |
| Maximum collector power dissipation (with a heatsink), W | 10 |
| Static current transfer coefficient | 7..25 |
| Collector reverse current, mkA | 100 |
| Beta cutoff, MHz | 0.05 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+120 |
