Transistors P701А are silicon alloy-diffused, with n-p-n structure, amplifying, low frequency.
Transistors are designed for application in amplifiers and power sources of radioelectronic devices.
Transistors are produced in metal-glass casing with stiff lead-outs.
Transistor maximum weight 12 g.
Technical characteristics of transistors P701, P701А, P701B:
| Transistor type | Structure | Maximum values of parameters at Тp=25°С | Values of parameters at Тp=25°С | Tp | Т | ||||||||||||
| Ic | Ic. i. | Uce R max | Ucb0 max | Ueb0 max | Рcmax | h21e | Uce sat. | IcbО | IebО | f gr. | CSH | SK | SE | ||||
| А | А | V | V | V | Vt | V | mcА | mА | MHz | dB | pF | pF | °С | °С | |||
| P701 | n-p-n | 0,5 | 1 | 40 | 40 | 2 | 1 (10) | 10…40 | 7 | 100 | 3 | 20 | - | - | - | 125 | -60…+125 |
| P701А | n-p-n | 0,5 | 1 | 60 | 60 | 2 | 1 (10) | 15…60 | 7 | 100 | 3 | 20 | - | - | - | 125 | -60…+125 |
| P701B | n-p-n | 0,5 | 1 | 40 | 40 | 2 | 1 (10) | 30…130 | 7 | 100 | 3 | 20 | - | - | - | 125 | -55…+100 |
