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6ZH9P-E

High-tranconductance pentode for wide-band amplification in communications electronics equipment output stages. Case type: glass, miniature. Mass 15 g

Main parameters (at Uf=6.3 V, Ua=150 V, Ug1=0 V)

Filament current, mA

300+20/-25

Anode current, mA

15±4

Anode current at Ug1=-8 V

≤10

2nd grid current, mA

2.4+0.6/-0.8

1st grid reverse current, µA

≤0.2

Cathode-to-filament leakage current, µA

≤15

Transconductance, mA/V

17.5±3.5

Transconductance at Uf=5.7 V, mA/V

≥12

Internal resistance, k?

100

Equivalent noise resistance, k?

0.35±0.25

Input resustance (at f=60 MHz), k?

5

Vibronoise voltage (at Ra=700?), mV

≤40

Interelectrode capacitance, pF

input

output

input-to-output

cathode-to-filament

7.8±0.8

2.7±0.8

0.02..0.03

4.5..6.5

Durability, h

≥5000

Durability test

1st grid reverse current, µA

transconductance, mA/V

transconductance change

≤2

≥11

≤±15%

Operational limits

Filament voltage, V

6-6.6

Anode voltage, V

160

Anode voltage in off-state, V

285

2nd grid voltage, V

150

2nd grid voltage in off-state, V

200

1st grid negative voltage, V

100

Cathode-to-filament voltage, V

at filament positive potential

at filament negative potential

100

100

Cathode current, mA

22

Anode power dissipation, W

3

2nd grid power dissipation, W

0.45

1st grid circuit resistance, M?

0.5

Envelope temperature, oC

130

Sinusoidal vibration

frequency, Hz

acceleration, g

5-600

6

Multiple impacts acceleration, g

150

Single impact acceleration, g

500

Linear acceleration, g

100

Ambient air temperature, oC

-60..+100

You can order 6ZH9P-E from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com