2A520A, KA520A, KA520B
UHF switching silicon epitaxial diode with p-i-n structure.
Case type: metal-ceramic, mass not more than 1.3 g
Diodes are designed for use in S-band and L-band switching devices.
Main parameters
| Parameter | 2A520A, KA520A | KA520B | ||
| not less than | not more than | not less than | not more than | |
| Breakdown voltage (at reverse current 100 mkA | 800 | 600 | ||
| Cut-off frequency (at forward current 100 mA, reverse voltage 100 V), GHz | 200 | 150 | ||
| Collected charge (at forward current 100 mA and reverse voltage impulse amplitude 300 V), nC | 300 | 300 | ||
| Forward loss resistance (at forward current 100 mA), Ohm | 2 | 3 | ||
| Total capacitance (at reverse voltage 100 V), pF | 0.4 | 1.0 | 0.4 | 1.0 |
| Case capacitance, pF | 0.3 | 0.45 | 0.3 | 0.45 |
Marking
| Diode type | Marking dots |
| 2A520A | black, red |
| KA520A | black, red, green |
| KA520B | yellow, red, green |
