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2D-112-10-10

2D112-10-10

Silicon diffusion diode.

Designed for static DC and AC (up to 1.5 kHz) voltage convertors.

Case type: metal-glass with hard straight polarity terminal.

For straight polarity diodes anode is the case basis, for reverse polarity the anode is a hard terminal

Cooling: free air cooling.

Version and polarity are indicated on diode case

Mass not more than 6 g.

Suitable heatsink: O111

Technical requirement version TU16.729.310-81

Annotation breakdown:

2D – rectifying diode

1 – design version

1 – case diameter

2 – case design

10 – maximum allowed mean current in on-state, A

10 – repeating reverse voltage class

Technical parameters

Maximum allowed mean forward current, A

10

Repeating impulse reverse voltage, V

1000

Non-repeating impulse reverse voltage, V

1100

Operational impulse reverse voltage, V

800

Constant reverse voltage, V

600

Maximum allowed forward current, A

16

Surge current, kA

0.25

Repeating impulse reverse current, mA

3.0

Impulse forward voltage, V

1.35

Threshold voltage, V

0.6

Dynamic resistance, mOhm

14

Reverse recovery time, mks

8

Recovered charge, mkC

60

Junction-to-case thermal resistance, oC/W

2.7

Junction temperature,oC

-60..+150


You can order 2D-112-10-10 from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com