2D112-10-10
Silicon diffusion diode.
Designed for static DC and AC (up to 1.5 kHz) voltage convertors.
Case type: metal-glass with hard straight polarity terminal.
For straight polarity diodes anode is the case basis, for reverse polarity the anode is a hard terminal
Cooling: free air cooling.
Version and polarity are indicated on diode case
Mass not more than 6 g.
Suitable heatsink: O111
Technical requirement version TU16.729.310-81
Annotation breakdown:
2D – rectifying diode
1 – design version
1 – case diameter
2 – case design
10 – maximum allowed mean current in on-state, A
10 – repeating reverse voltage class
Technical parameters
| Maximum allowed mean forward current, A | 10 |
| Repeating impulse reverse voltage, V | 1000 |
| Non-repeating impulse reverse voltage, V | 1100 |
| Operational impulse reverse voltage, V | 800 |
| Constant reverse voltage, V | 600 |
| Maximum allowed forward current, A | 16 |
| Surge current, kA | 0.25 |
| Repeating impulse reverse current, mA | 3.0 |
| Impulse forward voltage, V | 1.35 |
| Threshold voltage, V | 0.6 |
| Dynamic resistance, mOhm | 14 |
| Reverse recovery time, mks | 8 |
| Recovered charge, mkC | 60 |
| Junction-to-case thermal resistance, oC/W | 2.7 |
| Junction temperature,oC | -60..+150 |
