Switching tunnel galliumarsenide diode for switching devices
Case type: metal-ceramic with flexible terminals.
Diode type is indicated on the lable
Mass not more than 0.15 g.
Electrical parameters
| Peak-point current, mA at +25oC at -60 and +70 oС | 1.6..2.4 1.3..2.6 | |
| Peak-point current to valley-point current relation, not less than | 8 | |
| Peak-point voltage, not more than, V | 0.18 | |
| Projected peak-point voltage, not less than, V | 0.65 | |
| Total capacitance in current-voltage curve minimum point (at f=1..10 MHz), not more than, pF | 12 | |
| Case capacitance, not more than, pF | 0.8 | |
| Diode inductance , not more than, nH | 1.5 |
Operational limits
| Constant forward current, mA | 1.2 |
| Ambient air temperature, oC | -60..+70 |
Soldering and bending of terminals allowed not closer than 3 mm to diode case. In case of terminal bending, its base end should be secured properly. Terminals can be shortened to 8.5 mm without applying mmechanical stress to the case.
During diode mounting pressure not more than 15 N (in orthogonal direction) can be applied to diode case.
Probing with a tester is not allowed.
