Silicon diffused-junction diode for use in rectifying and converter devices with frequencies 1.. 50 kHz
Case type: KD-10 (metal-glass with hard terminals)
Technical requirement version aA0.339.076 TU
Mass not more than 3 g
Technical parameters
| Maximum constant reverse voltage, V | 800 |
| Maximum impulse reverse voltage, V | 800 |
| Maximum forward current, A | 3 |
| Maximum impulse forward current, A | 60 |
| Forward voltage/Forward current, V/A | 1.2/1 |
| Leakage current at peak reverse voltage, at +25oC/at maximum temperature, µA/mA | 45/1.5 |
| Maximum frequency, kHz | 50 |
