3L107B-01
Mesa-epitaxial gallium arsenide IR-emitting diode in plastic encapsulation.
3L107B diode is marked with a double strip.
Mass not more than 2 g
Case type KDI-7
Technical requirement version FY0.336.005 TU
Electrical and emission parameters
| Emission power at +25 oC and steady forward current 100 mA, not less than | 9 mW |
| Impulse emission power at steady forward current 0.8 A and impulse length 50 µS | 50 mW |
| Wave length at spectrum density maximum and 100 mA | 0.9..0.12 µm |
| Steady forward voltage at 100 mA at >+25 oC at -60oC | 2 V 2.5 V |
Operational limits
| Steady forward current at <+35 oC at +85 oC | 100 mA 80 mA |
| Impulse forward current at impulse length <50 µS and pulse ratio 20 at <+35 oC at +85 oC | 0.6 A 0.65 A |
| Ambient air temperature oC | -60..+85 oC |
