N-base unijunction epitaxial-planar silicon transistor for use in low-power generators.
Case type: KT-1-7(TO-18), metal-glass with flexible terminals.
Mass not more than 0.6 g.
Warranty: 25 years.
Technical parameters (at junction temperature 25 oC)
| Maximum allowed collector constant current, mA | 50 |
| Maximum allowed collector impulse current, A | 1 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 30 |
| Maximum emitter-to-base voltage at zero collector current, V | 30 |
| Maximum allowed collector power dissipation, mW | 300 |
| Static current transfer coefficient | 0.65..0.8 |
| Emitter reverse current, mkA | 1 |
| Beta cutoff, MHz | >0.2 |
| Maximum allowed junction temperature, oC | 130 |
| Ambient air temperature, oC | -60..+125 |
