High-tranconductance pentode for wide-band amplification in communications electronics equipment output stages. Case type: glass, miniature. Mass 15 g
Main parameters (at Uf=6.3 V, Ua=150 V, Ug1=0 V)
Filament current, mA | 300+20/-25 |
Anode current, mA | 15±4 |
Anode current at Ug1=-8 V | ≤10 |
2nd grid current, mA | 2.4+0.6/-0.8 |
1st grid reverse current, µA | ≤0.2 |
Cathode-to-filament leakage current, µA | ≤15 |
Transconductance, mA/V | 17.5±3.5 |
Transconductance at Uf=5.7 V, mA/V | ≥12 |
Internal resistance, k? | 100 |
Equivalent noise resistance, k? | 0.35±0.25 |
Input resustance (at f=60 MHz), k? | 5 |
Vibronoise voltage (at Ra=700?), mV | ≤40 |
Interelectrode capacitance, pF input output input-to-output cathode-to-filament | 7.8±0.8 2.7±0.8 0.02..0.03 4.5..6.5 |
Durability, h | ≥5000 |
Durability test 1st grid reverse current, µA transconductance, mA/V transconductance change | ≤2 ≥11 ≤±15% |
Operational limits
Filament voltage, V | 6-6.6 |
Anode voltage, V | 160 |
Anode voltage in off-state, V | 285 |
2nd grid voltage, V | 150 |
2nd grid voltage in off-state, V | 200 |
1st grid negative voltage, V | 100 |
Cathode-to-filament voltage, V at filament positive potential at filament negative potential | 100 100 |
Cathode current, mA | 22 |
Anode power dissipation, W | 3 |
2nd grid power dissipation, W | 0.45 |
1st grid circuit resistance, M? | 0.5 |
Envelope temperature, oC | 130 |
Sinusoidal vibration frequency, Hz acceleration, g | 5-600 6 |
Multiple impacts acceleration, g | 150 |
Single impact acceleration, g | 500 |
Linear acceleration, g | 100 |
Ambient air temperature, oC | -60..+100 |