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V7-200-3V2

High-power rectifying diode

Technical parameters

Maximum allowed average forward current, A, at

diode case temperature, oC

200

150

Maximum allowed repetitive impulse reverse voltage, V*

300

Maximum allowed impulse current, A, at

impulse duration, ms

temperature, oC

3000

10

25

Maximum frequency, kHz, at

average forward current, A

temperature, oC

10

120

25

Maximum junction temperature, oC

200

Impulse forward voltage, V, at

impulse forward current, A

temperature, oC

1.7

628

25

Reverse recovery time, µs, at

impulse forward current, A

impulse reverse voltage, V

impulse reverse current, mA

current rate of rise, A/µs

temperature, oC

7

200

100

-

5

maximum junction temperature

Repetitive impulse reverse current, mA*

40

Junction-to-case thermal resistance, oC/W*

0.16

*at T = 25oC

You can order V7-200-3V2 from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com