Home  /  Products  /  Transistors  /  2P762A

2P762A

Epitaxial-planar silicon insulated-gate switching FET with n-channel for use in key stabilizers, impulse power supply modulators, electric drive, control and switching circuits.

Case type: metal-ceramic with strip terminals

Mass not more than 5g

Electrical parameters

Drain-to-source resistance in on-state at UGD=15 V and ID=30 A, ?

0.075*..0.08*..0.085

Initial drain current at UDS=max, UGD=0 V, not more than, mA

at +25 oC, -60 oC

at +125 oC

2

8

Gate leakage current at UGD=15 V, not more than, A

2.5?10-7

Threshold voltage at UDS=10 V and ID=10mA, V

2..5

Turn-on time at US=50 V, UINP=10 V, RG=3 ?, RL=2 ?, bogey value, ns

40*

Turn-off time at US=50 V, UINP=10 V, RG=3 ?, RL=2 ?, bogey value, ns

80

Input capacitance at UDS=20 V, UGD=0 V, pF

2800*..3000*..3330*

Input-to-output capacitance at at UDS=20 V, UGD=0 V, pF

170*..210*..240*

Output capacitance at at UDS=20 V, UGD=0 V, pF

570*..600*..650*

Operational limits

Drain-to-source voltage, V

100

Gate-to-drain voltage, V

15

Gate-to-source voltage, V

100

Drain current (continuous), A

30

Drain current (impulse), A

100

Power dissipation at -60..+35 oC, W

80

Junction temperature, oC

+150

Ambient air temperature, oC

-60..+125

At case temperature more than +35 oC power dissipation equals formula Pmax=(150-TC)/RT(P-C)

Mounting method: soldering, not more than 3 times. Minimum distance from case till terminal bend 3mm. Minimum distance from case to soldering point 3 mm, temperature not more than +265 oC, soldering duration 3 s.

Thermal interface roughness 1.6 µm, variation in plane not more than 0.02 mm. Thermal grease usage recommended for contact resistance reduction.

You can order 2P762A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com