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2T112-10-8-44

Low-frequency impulse semiconductor switch with plug-in design.

Designed for use in convertor installations, AC and DC power units. Case type: metal-glass with hard terminals. Forced or ambient air cooling required.

Dimensions:

-total length 31 mm

-stud length 11 mm

-thread M5

Technical requirement version TU16-729.349.82

Mass not more than 6 g

Technical parameters (at junction temperature +25 oC)

On-state maximum allowed current, A

10

Off-state maximum allowed repetitive impulse voltage, V

800

Maximum allowed repetitive impulse reverse voltage, V

800

Off-state repetitive impulse current, mA

3

Repetitive impulse reverse current, mA

3

Surge on-state current, A

150

Dynamic resistance, MOhm

21

Critical rate of rise of off-state voltage, V/mcs

200..1000

Critical rate of rise of on-state current, A/mcs

100

On-state impulse voltage, V

1.85

Threshold voltage, V

1.2

Breakover current, mA

100

Hold current, mA

70

Gate trigger current, mA

40

Gate trigger voltage, V

3

On-delay time, mcs

2

Off-delay time, mcs

63..100

Thermal junction-to-case resistance, oC/W

1.8

Junction temperature, oC

-60..+125

You can order 2T112-10-8-44 from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com