2T201B - Transistors | Russian Electronics company

Transistors 2T201A, 2T201B, 2T201V, 2T201G (with unrationed noise coefficient), 2T201D (with rationed noise coefficient) are silicon, epitaxial-planar, amplifying with p-n-p structure.

Transistors are designed for application in amplifiers of low frequency.

Transistors are produced in metal-glass casing with flexible leads.

Casing type: KT-1-7.

Basic technical characteristics of transistor 2Т201B:
• transistor structure: n-p-n
• Рc max – constant dissipated power of collector: 150 mW;
• fl – limit frequency of coefficient of current transmitting of transistor for circuits with common emitter: minimum 10 MHz;
• Ucbоmax – maximum voltage collector-base at given reverse current of collector and open circuit of emitter: 20 V;
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 20 V;
• Ic max – maximum direct current of collector: 20 mА;
• Icbо– reverse current of collector: maximum 0,5 mcА;
• h21e – static coefficient of current transmitting of transistor in small signal mode for circuits with common emitter: 30...90;
• Сk – collector junction capacitance: maximum 20 pF

Technical characteristics of transistors 2Т201А, 2Т201B, 2Т201V, 2Т201G, 2Т201D:

Transistor type	Structure	Maximum values of parameters at Тp=25°С						Values of parameters at Тp=25°С								Tp max	Т max
		Ik max	Ik. I. max	UkeR max	Ukb0 max	Ueb0 max	Рkmax	h21E	Uke sat.	IkbО	IebО	f l.	KSH	SK	SE	Tp max	Т max
		мА	мА	В	В	В	мВт		В	мкА	мкА	МГц	дБ	пФ	пФ	°С	°С
2Т201А	n-p-n	20	100	20	20	20	150	20…60	-	0,5	3	>10	-	20	-	150	-60…+125
2Т201B	n-p-n	20	100	20	20	20	150	30…90	-	0,5	3	>10	-	20	-	150	-60…+125
2Т201V	n-p-n	20	100	10	10	10	150	30…90	-	0,5	3	>10	-	20	-	150	-60…+125
2Т201G	n-p-n	20	100	10	10	10	150	70…210	-	0,5	3	>10	-	20	-	150	-60…+125
2Т201D	n-p-n	20	100	10	10	10	150	30…90	-	0,5	3	>10	15	20	-	150	-60…+125

You can order 2T201B from us

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