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2T201B

Transistors

Transistors 2T201A, 2T201B, 2T201V, 2T201G (with unrationed noise coefficient), 2T201D (with rationed noise coefficient) are silicon, epitaxial-planar, amplifying with p-n-p structure.

Transistors are designed for application in amplifiers of low frequency.

Transistors are produced in metal-glass casing with flexible leads.

Casing type: KT-1-7.


Basic technical characteristics of transistor 2Т201B:
• transistor structure: n-p-n
• Рc max – constant dissipated power of collector: 150 mW;
• fl – limit frequency of coefficient of current transmitting of transistor for circuits with common emitter: minimum 10 MHz;
• Ucbоmax – maximum voltage collector-base at given reverse current of collector and open circuit of emitter: 20 V;
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 20 V;
• Ic max – maximum direct current of collector: 20 mА;
• Icbо– reverse current of collector: maximum 0,5 mcА;
• h21e – static coefficient of current transmitting of transistor in small signal mode for circuits with common emitter: 30...90;
• Сk – collector junction capacitance: maximum 20 pF

Technical characteristics of transistors 2Т201А, 2Т201B, 2Т201V, 2Т201G, 2Т201D:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Values of parameters at Тp=25°С

Tp
max

Т
max

Ik
max

Ik. I.
max

UkeR max

Ukb0 max

Ueb0 max

Рkmax

h21E

Uke
sat.

IkbО

IebО

f l.

KSH

SK

SE

мА

мА

В

В

В

мВт

В

мкА

мкА

МГц

дБ

пФ

пФ

°С

°С

2Т201А

n-p-n

20

100

20

20

20

150

20…60

-

0,5

3

>10

-

20

-

150

-60…+125

2Т201B

n-p-n

20

100

20

20

20

150

30…90

-

0,5

3

>10

-

20

-

150

-60…+125

2Т201V

n-p-n

20

100

10

10

10

150

30…90

-

0,5

3

>10

-

20

-

150

-60…+125

2Т201G

n-p-n

20

100

10

10

10

150

70…210

-

0,5

3

>10

-

20

-

150

-60…+125

2Т201D

n-p-n

20

100

10

10

10

150

30…90

-

0,5

3

>10

15

20

-

150

-60…+125

You can order 2T201B from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com