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2T326B

Transistors

Transistors 2T326B are silicon, epitaxial-planar, amplifying, with p-n-p structure.

Transistors are designed for application in amplifiers with high and super high frequency in switching devices.

Transistors 2Т326А, 2Т326B, KT326А, KT326 are produced in metal-glass casing with flexible leads.

Device type marked on casing.

Transistor weight, maximum: 0.5 g.

Casing type: KT-1-7.


Basic technical characteristics of transistor 2Т326B:
• transistor structure: p-n-p;
• Рc max – constant dissipated power of collector: 200 mW;
• fl – limit frequency of coefficient of current transmitting of transistor for circuit with common emitter, minimum 400 MHz;
• Ucer max – maximum voltage collector-emitter at given current of collector and given resistance in base-emitter circuit: 15 V (100 kOm);
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – maximum direct current of collector: 50 mА;
• Icbо– reverse current of collector: maximum 0,5 mcА;
• h21E – static coefficient of current transmitting for connection with common emitter in big signal mode: 45... 160;
• Сc – collector junction capacitance: maximum 5 pF;
• Rce sat – saturation resistance between collector and emitter: maximum 30 Om;
• tк– time constant of back coupling at high frequency: maximum 450 ps

Technical characteristics of transistors 2Т326А, 2Т326B:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Parameters values at Тp=25°С

Т

Ik
max

Ik. I.
max

UceR max
(Uce0 max)

Ucb0 max

Ueb0 max

Рkmax
(Рk. I.max)

h21E,
(h21e)

Ucb
(Uce)

Ie
(Ic)

Uce
sat.

IcbО

fl.
(f h21)

KSH

SK

V

V

V

mW

V

V

mcА

MHz

dB

pF

°С

2Т326А

p-n-p

50

-

15

20

4

250

20...70

2

10

0,3

0,5

250

-

5

-60…+125

2Т326B

p-n-p

50

-

15

20

4

250

45...160

2

10

0,3

0,5

400

-

5

-60…+125

You can order 2T326B from us