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2T363A

Universal p-n-p epitaxial-planar silicon transistor for use in high- and ultra-high frequency amplifiers and switching devices

Case type: KT-1-7(TO-18), metal-glass with flexible terminals.

Mass not more than 0.5 g.

Climate version: boreal

Lifetime: 80000 h in all modes, 100000 in light mode

Technical parameters

Maximum allowed collector constant current, mA

30

Maximum allowed collector impulse current, mA

50

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

15

Maximum collector-to-base voltage at given collector current and zero emitter current, V

15

Maximum emitter-to-base voltage at zero collector current, V

4

Maximum allowed collector power dissipation, mW

150

Static current transfer coefficient

20..120

Collector-to-emitter saturation voltage, V

0,35

Collector reverse current, mkA

0.5

Beta cutoff, GHz

>1.0

Collector junction capacitance, pF

2

Emitter junction capacitance, pF

2

Maximum allowed junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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