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2T368B

Amplifying n-p-n epitaxial-planar silicon transistor for use in input and following stages of amplifiers

Case type: KT-1-12, metal-glass with flexible terminals.

Mass not more than 0.6 g.

Climate version: boreal

Lifetime: 80000 h in all modes, 100000 in light mode

Technical parameters

Maximum allowed collector constant current, mA

30

Maximum allowed collector impulse current, mA

60

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

15

Maximum collector-to-base voltage at given collector current and zero emitter current, V

15

Maximum emitter-to-base voltage at zero collector current, V

4

Maximum allowed collector power dissipation, mW

225

Static current transfer coefficient

50..300

Collector reverse current, mkA

0.5

Beta cutoff, MHz

900

Noise ratio, dB

3.3

Collector junction capacitance, pF

1.7

Emitter junction capacitance, pF

3

Maximum allowed junction temperature, oC

150

Ambient air temperature, oC

-60..+125



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