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2T602B

Transistors – silicon planar with n-p-n structure.

Transistors are designed for generating and amplifying signals.
Transistors 2Т602А, 2Т602B are produced in metal-glass casing with flexible lead-outs.
Transistor weight - maximum 5 g.

Basic technical characteristics of transistors 2Т602B:
• Transistor structure: n-p-n;
• Рc max – Constant dissipated power of collector: 0,85 Vt;
• Рc p max – Maximum pulse dissipated power of collector: 2,8 Vt;
• fgr – Limit frequency of current transmitting coefficient for circuits with common emitter: minimum 150 MHz;
• Ucbo max – Maximum voltage collector-base at given reverse current of collector and open current of emitter: 120 V;
• Uebo max – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – Maximum direct current of collector: 75 mA;
• Ic p max – Maximum pulse current of collector: 500 mA;
• Icbo – Collector reverse current: maximum 70 mcA;
• h21e – Static coefficient of current transmitting of transistor for circuits with common emitter: 20... 80;
• Сc – Capacitance of collector junction: maximum 4 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 4 Om;
• tc – Response time of feedback circuit at high frequency: maximum 300 ps

Technical characteristics of transistors 2Т602А, 2Т602B:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Values of parameters at Тp=25°С

Tp
max

Т
max

Ic
max

Ic. p.
max

Uce R max
(Uce0 max)

Ucb0 max

Ueb0 max

Рcmax
(Рc. Т.max)

h21e

Uce sat

IcbО

IebО

IceR

f gr.

Сc

Сe

mA

mA

V

V

V

Vt

V

mcА

mcА

mcА

MHz

pF

pF

°С

°С

2Т602А

n-p-n

75

500

100

120

5

0,85 (2,8)

20…80

<3

<10

<50

<10

>150

<4

<25

150

-60…+125

2Т602B

n-p-n

75

500

100

120

5

0,85 (2,8)

50…200

<3

<10

<50

<10

>150

<4

<25

150

-60…+125

You can order 2T602B from us