Home  /  Products  /  Transistors  /  2T606A

2T606A

2T transistor series

2T504A: switching-type n-p-n silicon junction transistor

2Т606А, 2Т907А, 2Т904А: generator-type n-p-n silicon epitaxial junction transistor

2Т839А: impulse-type n-p-n silicon epitaxial junction transistor

Design:

2T504A: glass-metal case with flexible lead

2Т606А, 2Т907А, 2Т904А: metal case with hard leads and mounting screw

2Т839А: metal case with glass insulator and hard leads

Application:

2T504A: high-voltage voltage stabilizers and converters, gas-discharge panel display controller devices

2Т606А, 2Т907А, 2Т904А: power amplifiers, frequency multipliers and self-excited oscillators at frequencies 100…400 MHz and voltage 28 V

2Т839А: high-voltage switching devices and secondary power supplies

Electrical parameters:

Transistor type

Structure

Parameters limits at Tj=25 °C

Parameters values at Tj=25 °C

Тj max

Тmax

Icmax

Icimax

UceR max
(Uce0 max)

Ucb0 max

Ucb0 max

Pcmax
(Pch max)

hct

Uce sat

Icbr

Iebr

fbc

Cn

Cc

Ce

A

A

V

V

V

W

V

µA

µA

MHz

dB

pF

pF

°C

°C

2Т504А

n-p-n

1

2

350

400

6

1 (10)

>15

1

100

100

20

-

30

300

125

-60…+125

2Т606А

n-p-n

0,4

0,8

65

-

4

28

2,5

-

<1

<1

<0,1

>350

0,8

>2,5

150

-60…+125

2Т907А

n-p-n

1

3

65 (75)

-

4

28

16

10…80

<0,35

<2

<0,25

0,35

>8

>2

150

-60…+125

2Т904А

n-p-n

0,8

1,5

65

-

4

28

7

>10

<0,3

<1

<0,1

>0,35

>3

>2,5

150

-60…+125

2Т839А

n-p-n

10

10

1500

1500

5

50

>5

<1,5

<1

<10

-

5

240

4000

125

-60…+125

You can order 2T606A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com