Home  /  Products  /  Transistors  /  2T608B

2T608B

Transistors

Transistors 2Т608B are silicon epitaxial planar switching with n-p-n structure.
Transistors are designed for application in quick-operating pulse and high-frequency devices.
Transistors are produced in metal glass casing with flexible lead-outs.
Transistor maximum weight – 2g.

Basic technical characteristics of transistor 2Т608B:
• Transistor structure: n-p-n;
• Рc max – Collector constant dissipated power: 0,5 Vt;
• fgr – Cut-off frequency of current transmitting coefficient for common-emitter circuits: minimum 200 Mhz;
• Ucb max – Maximum voltage collector-base at given current of collector and open circuit of emitter: 60 V;
• Ueb max – Maximum voltage of emitter-base at given reverse current of emitter and open circuit of collector: 4 V;
• Ic max – Maximum constant current of collector: 400 mА;
• Ic p max – Maximum pulse current of collector: 800 mА;
• Icb – Reverse current of collector – current through collector junction at given reverse voltage collector-base and open lead-out of emitter: maximum 10 mcА(60V);
• h21e – Static coefficient of current transmitting for circuits with common emitter: 40...160;
• Сc – Capacitance of collector junction: maximum 15 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 2,5 Om

Technical characteristics of transistors 2Т608А, 2Т608B:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Значения параметров при Тп=25°С

Tp
max

Т
max

Ic
max

Ic. I.
max

UceR max

Ucb0 max

Ueb0 max

Рcmax

h21e

Uce
sat.

IcbО

IebО

IceR

f gr.

Сc

Сe

mA

mA

V

V

V

Vt

V

mcA

mcA

mcA

MHz

pF

pF

°С

°С

2Т608А

n-p-n

400

800

60

60

4

0,5

25…80

<1

<10

<10

-

>200

<15

<50

150

-60…+125

2Т608B

n-p-n

400

800

60

60

4

0,5

50…160

<1

<10

<10

-

>200

<15

<50

150

-60…+125

You can order 2T608B from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com