2T608B

Transistors 2Т608B are silicon epitaxial planar switching with n-p-n structure.
Transistors are designed for application in quick-operating pulse and high-frequency devices.
Transistors are produced in metal glass casing with flexible lead-outs.
Transistor maximum weight – 2g.

Basic technical characteristics of transistor 2Т608B:
• Transistor structure: n-p-n;
• Рc max – Collector constant dissipated power: 0,5 Vt;
• fgr – Cut-off frequency of current transmitting coefficient for common-emitter circuits: minimum 200 Mhz;
• Ucb max – Maximum voltage collector-base at given current of collector and open circuit of emitter: 60 V;
• Ueb max – Maximum voltage of emitter-base at given reverse current of emitter and open circuit of collector: 4 V;
• Ic max – Maximum constant current of collector: 400 mА;
• Ic p max – Maximum pulse current of collector: 800 mА;
• Icb – Reverse current of collector – current through collector junction at given reverse voltage collector-base and open lead-out of emitter: maximum 10 mcА(60V);
• h21e – Static coefficient of current transmitting for circuits with common emitter: 40...160;
• Сc – Capacitance of collector junction: maximum 15 pF;
• Rce sat – Saturation resistance between collector and emitter: maximum 2,5 Om

Technical characteristics of transistors 2Т608А, 2Т608B: