Universal p-n-p germanium alloy-type transistor for switching devices, low-frequency amplifiers’ outer stages and DC voltage converters.
Case type: metal-glass with hard terminals.
Device type is marked on its case.
Mass not more than 10 g
Technical requirement version ShB3.365.005 TU1
Technical parameters (at junction temperature +25 oC)
| Maximum allowed collector constant current, A | 0.4 |
| Maximum allowed collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V | 60 |
| Maximum allowed collector-to-base voltage at given collector current and zero emitter current, V | 60 |
| Maximum constant collector power dissipation (with a heatsink), W | 10 |
| Static current transfer ratio | 7..25 |
| Collector reverse current, µA | 100 |
| Beta cutoff, MHz | 0.05 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+120 |
