* Pictures are placed for illustration purpose only. Appearance of real component may differ
Gallium-arsenide planar epitaxial diode with a Shottky barrier for frequency converters of 2 cm wavelength.
Case type: metal-ceramic. Diode type and polarity is indicated on the label.
Annotation breakdown:
1st digit – diode type (for 3A110A-6, 3A110B – 7)
2nd digit – production quarter
3rd digit – production year.
Diodes are also produced in matching pairs (3A110AR, 3A110BR).
Mass not more than 0.15 g
Electrical parameters
| Conversion loss at P=3 mW, λ= 2 cm at 298 K 3A110A 3A110B at 213 and 398 K 3A110A 3A110B | 6.5 dB 6 dB 8 dB 7.5 dB |
| Rectified current at P=3 mW, λ= 2 cm | 0.9..2.2 mA |
| Standing-wave ratio at P=3 mW, λ= 2 cm, not more than 3A110A 3A110B | 2 1.6 |
| Output resistance at P=3 mW, λ= 2 cm 3A110A 3A110B | 200..500 Ohm 210..490 Ohm |
| Standartized noise rate at P=3 mW, λ= 2 cm, not more than 3A110A 3A110B | 8 dB 7.5 dB |
