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3A110B

* Pictures are placed for illustration purpose only. Appearance of real component may differ

Gallium-arsenide planar epitaxial diode with a Shottky barrier for frequency converters of 2 cm wavelength.

Case type: metal-ceramic. Diode type and polarity is indicated on the label.

Annotation breakdown:

1st digit – diode type (for 3A110A-6, 3A110B – 7)

2nd digit – production quarter

3rd digit – production year.

Diodes are also produced in matching pairs (3A110AR, 3A110BR).

Mass not more than 0.15 g

Electrical parameters

Conversion loss at P=3 mW, λ= 2 cm

at 298 K

3A110A

3A110B

at 213 and 398 K

3A110A

3A110B

6.5 dB

6 dB

8 dB

7.5 dB

Rectified current at P=3 mW, λ= 2 cm

0.9..2.2 mA

Standing-wave ratio at P=3 mW, λ= 2 cm, not more than

3A110A

3A110B

2

1.6

Output resistance at P=3 mW, λ= 2 cm

3A110A

3A110B

200..500 Ohm

210..490 Ohm

Standartized noise rate at P=3 mW, λ= 2 cm, not more than

3A110A

3A110B

8 dB

7.5 dB

You can order 3A110B from us