Diode 3I306K tunnel, switching – designed for application in switching devices. Diodes are produced in metal-ceramic casing with flexible lead-outs. Diode weight – maximum 0,15 g.
Electric parameters:
Peak-point current:
At Т= 25 С:
- 3I306G, 3I306Е1,8..2,2 mА
- 3I306ZH, 3I306K, 3I306R 4,5..5,5 mА
- 3I306L, 3I306М, 3I306N, 3I306S 9..11 mА
At Т=100 С:
- 3I306G, 3I306Е1,5..2,4 мА
- 3I306ZH, 3I306K, 3I306R 3,9..5,9 мА
- 3I306L, 3I306М, 3I306N, 3I306S 7,7..11,8 мА
At Т=-60 С:
- 3I306G, 3I306Е1,5..2,4 mА
- 3I306ZH, 3I306K, 3I306R 3,8..5,9 mА
- 3I306L, 3I306М, 3I306N, 3I306S 7,6..11,8 mА
Peak-point voltage, maximum:
- At Т=25 С0,17 V
- At Т=100 С0,2 V
Total capacitance at minimum point of current-voltage characteristics at f=1..10 MHz:
- 3I306G, maximum 8 pF
- 3I306Е4..12 pF
- 3I306ZH, maximum15 pF
- 3I306K8..25 pF
- 3I306L, maximum 12 pF
- 3I306М, maximum 30 pF
- 3I306N 15..50 pF
- 3I306R 4..25 pF
- 3I306S 10..50 pF
Environment temperature -60..+100 С
