High-power rectifying diode
Technical parameters
| Maximum allowed average forward current, A, at diode case temperature, oC | 200 150 |
| Maximum allowed repetitive impulse reverse voltage, V* | 300 |
| Maximum allowed impulse current, A, at impulse duration, ms temperature, oC | 3000 10 25 |
| Maximum frequency, kHz, at average forward current, A temperature, oC | 10 120 25 |
| Maximum junction temperature, oC | 200 |
| Impulse forward voltage, V, at impulse forward current, A temperature, oC | 1.7 628 25 |
| Reverse recovery time, µs, at impulse forward current, A impulse reverse voltage, V impulse reverse current, mA current rate of rise, A/µs temperature, oC | 7 200 100 - 5 maximum junction temperature |
| Repetitive impulse reverse current, mA* | 40 |
| Junction-to-case thermal resistance, oC/W* | 0.16 |
*at T = 25oC






