190KT2

Parameter (at t=25±10⁰С)

Test Conditions

Value

Threshold gate-to-source voltage,V

V_CC= 0, I_D=10 µA, V_DSS=-5 V

-6

Gate leakage current,nA

V_GS = -30 V; V_DSS = V_CC=0

?30

Initial drain current, nA

V_CC=V_GS =0; V_DSS=-25 V

?50

Power source current, nA

V_CC=25 V

?150

On-resistance, Ohm

V_GS=-20 V; V_CC=0; I_D=1 mA

?50

On-resistance, Ohm

V_GS=-10 V; V_CC=0; I_D=1 mA

?120

Input capacitance, pF

V_DSS=-15V; V_CC=0; f=1 MHz

?24

Input-to-output capacitance, Pf

V_DSS=-15V; V_CC=0; f=1 MHz

?9

Output capacitance, pF

V_DSS=-15V; V_CC=0; f=1 MHz

15

V_DSS, V

V_GS, V

V_GD, V

V_CC, V

V_GB, V

I_D, mA

P_{D max,} mW

-25

-30

-30

25

-30

10

200