1NT251

1NT251

Transistor matrix, containing 4 switching epitaxial-planar n-p-n silicon transistors. Designed for use in switching devices

Case type: 401.14-6, metal-ceramic with flexible terminals.

Device type is indicated on its case.

Mass not more than 0.4 g.

Technical requirement version I93.456.000 TU

Technical parameters (at 25 oC)

Maximum allowed collector constant current, mA

400

Maximum allowed collector impulse current, mA

800

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

45

Maximum collector-to-base voltage at given collector current and zero emitter current, V

45

Maximum allowed emitter-to-base voltage at zero collector current, V

4

Maximum collector power dissipation, W

0.4

Static current transfer coefficient

30..150

Collector-to-emitter saturation voltage, V

<1

Collector reverse current, mkA

<6

Emitter reverse current, mkA

<10

Beta cutoff, MHz

>200

Collector junction capacitance, pF

<15

Emitter junction capacitance, pF

<50

Maximum junction temperature, oC

150

Ambient air temperature, oC

-60..+125

You can order 1NT251 from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com

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