1T403E
Amplifying germanium alloy p-n-p transistor for switching devices, low-frequency amplifier output stages, DC regulators and converters.
Case type: metal-glass with flexible terminals
Transistor type is indicated on its case.
Mass not more than 4 g.
Technical requirement: SI3.365.023 TU
Main parameters
| Maximum allowed collector constant current, A | 1.25 |
| Maximum collector-to-emitter voltage at given collector current and zero base current, V | 45 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 |
| Maximum emitter-to-base voltage at zero collector current, V | 20 |
| Maximum collector power dissipation, W | 5 |
| Static current transfer coefficient | >30 |
| Collector-to-emitter saturation voltage, V | 0.5 |
| Collector reverse current, mkA | 50 |
| Emitter reverse current, mkA | 50 |
| Beta cutoff, kHz | 8 |
| Maximum junction temperature, oC | 85 |
| Ambient air temperature, oС | -60..+70 |
