Diode bridge 542ND1 (K542ND1)
Diode arrays intended for building secondary power sources. Microcircuits are structurally designed in case type 402.16-7.
| Parameters1 | Mode of measurement | Values |
| Ufwd avg, V | Ifwd avg max= 500 mA | ≤1.2 |
| Irev avg, μА | Urev imp max= 50 V | ≤100 |
| Uimp rev max, V | f≤100 kHz; Т = — 60 ... + 125 °С | 50 |
| Ifwd avg max, mA | f≤50 Hz, Т = — 60 ... + 55 °С | 500 |
| Ifwd imp max, mA | timp= 1 s | 3 Ifwd avg max |
| timp= 0.5 s | 10 Ifwd avg max | |
| fmA, kHz | 100 | |
| R2meas, MOhm | U= 50 V | ≥5 |
1At temperature 25 ± 10°С.
2 The insulation resistance between the body and the leads or between the leads at a constant voltage of 50 V.
Note. The value of the parameters is given for one diode under the condition that the other three diodes are in non-conducting state.
