3L107B
Mesa-epitaxial gallium-arsenide IR-emitting diode.
Case type: plastic, mass not more than 0.2 g
Electrical and emission parameters
| Full-rated emission power (at ambient air temperature 213..298 K, forward current 100 mA), not more than, mW | 10 |
| Impulse emission power (at forward current 0.8 A, impulse duration 50 mks), not less than, mW | 50 |
| Constant forward voltage (at forward current 100 mA), not more than at 298 K at 213 K | 2 2.5 |
| Wavelength at spectrum peak (at ambient air temperature 213..358 K, forward current 100 mA), mkm | 0.9..1.2 |
Operational limits
| Constant forward current, mA at 213..308 K at 358 K | 100 80 |
| Impulse forward current (at impulse duration not more than 50 mks, pulse ratio 20), A at 213..308 K at 358 K | 0.8 0.65 |
| Ambient air temperature, K | 2123..358 |
At 358 K emission power drops not more than twice.
