2T117B
Epitaxial-planarunijunction silicon transistor with n-type base, designed for use in low-power generators.
Case type: metal with flexible terminals, type KT1-7
Device type is indicated on its case and label
Mass not more than 0.45g.
Technical requirement version TT3.365.000 TU
Technical parameters
| 2T117A | 2T117B | |
| Maximum allowed constant collector current, mA | 50 | 50 |
| Maximum allowed impulse collector current, A | 1 | 1 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 30 | 30 |
| Maximum emitter-to-base voltage at zero collector current, V | 30 | 30 |
| Maximum collector power dissipation, mW | 300 | 300 |
| Static current transfer coefficient | 0.5..0.7 | 0.65..0.8 |
| Emitter reverse current, mkA | 1 | 1 |
| Beta cutoff, MHz | >0.2 | >0.2 |
| Maximum junction temperature, oC | +130 | +130 |
| Ambient air temperature, oC | -60..+125 | -60..+125 |
