2T326B

Transistors

Transistors 2T326B are silicon, epitaxial-planar, amplifying, with p-n-p structure.

Transistors are designed for application in amplifiers with high and super high frequency in switching devices.

Transistors 2Т326А, 2Т326B, KT326А, KT326 are produced in metal-glass casing with flexible leads.

Device type marked on casing.

Transistor weight, maximum: 0.5 g.

Casing type: KT-1-7.

Basic technical characteristics of transistor 2Т326B:
• transistor structure: p-n-p;
• Рc max – constant dissipated power of collector: 200 mW;
• fl – limit frequency of coefficient of current transmitting of transistor for circuit with common emitter, minimum 400 MHz;
• Ucer max – maximum voltage collector-emitter at given current of collector and given resistance in base-emitter circuit: 15 V (100 kOm);
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 5 V;
• Ic max – maximum direct current of collector: 50 mА;
• Icbо– reverse current of collector: maximum 0,5 mcА;
• h21E – static coefficient of current transmitting for connection with common emitter in big signal mode: 45... 160;
• Сc – collector junction capacitance: maximum 5 pF;
• Rce sat – saturation resistance between collector and emitter: maximum 30 Om;
• tк– time constant of back coupling at high frequency: maximum 450 ps

Technical characteristics of transistors 2Т326А, 2Т326B: