Universal p-n-p epitaxial-planar silicon transistor for use in high- and ultra-high frequency amplifiers and switching devices
Case type: KT-1-7(TO-18), metal-glass with flexible terminals.
Mass not more than 0.5 g.
Climate version: boreal
Lifetime: 80000 h in all modes, 100000 in light mode
Technical parameters
| Maximum allowed collector constant current, mA | 30 |
| Maximum allowed collector impulse current, mA | 50 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 15 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 15 |
| Maximum emitter-to-base voltage at zero collector current, V | 4 |
| Maximum allowed collector power dissipation, mW | 150 |
| Static current transfer coefficient | 20..120 |
| Collector-to-emitter saturation voltage, V | 0,35 |
| Collector reverse current, mkA | 0.5 |
| Beta cutoff, GHz | >1.0 |
| Collector junction capacitance, pF | 2 |
| Emitter junction capacitance, pF | 2 |
| Maximum allowed junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
