2T880B transistors are silicon epitaxial-planar universal with p-n-p structure.
Transistors are designed for application in amplifiers and switching devices.
Transistors 2Т880А, 2Т880B, 2Т880V, 2Т880G, 2Т880D are produced in metal casing with glass insulators and flexible lead-outs.
Transistor weight in metal casing, maximum 2g.
Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.594ТU.
Characteristics of transistors 2Т880А, 2Т880B, 2Т880V, 2Т880G, 2Т880D, 2Т880А-5:
| Transistor type | Structure | Maximum values of parameters at Тp=25°С | Values of parameters at Tp=25°С | Tp | Т | ||||||||||||
| Ic | Ic. i. | UceR max | Ucb0 max | Ueb0 max | Рcmax | h21E | Uce | IcbО | IebО | IceR | f l. | Сc | Сe | ||||
| А | А | V | V | V | W | V | mА | mА | mА | МHz | pF | pF | °С | °С | |||
| 2Т880А | p-n-p | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 80...250 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т880B | p-n-p | 2 | 4 | 80 | 80 | 4,5 | 0,8 (5) | 80...250 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т880V | p-n-p | 2 | 4 | 50 | 50 | 4,5 | 0,8 (5) | 80...250 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т880G | p-n-p | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 40…160 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т880D | p-n-p | 2 | 4 | 80 | 80 | 4,5 | 0,8 (5) | 40…350 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т880А-5 | p-n-p | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 80...250 | <0,35 | <0,2 | <1 | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
