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2T880B

2T880B transistors are silicon epitaxial-planar universal with p-n-p structure.

Transistors are designed for application in amplifiers and switching devices.

Transistors 2Т880А, 2Т880B, 2Т880V, 2Т880G, 2Т880D are produced in metal casing with glass insulators and flexible lead-outs.

Transistor weight in metal casing, maximum 2g.

Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.594ТU.

Characteristics of transistors 2Т880А, 2Т880B, 2Т880V, 2Т880G, 2Т880D, 2Т880А-5:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Values of parameters at Tp=25°С

Tp
max

Т
max

Ic
max

Ic. i.
max

UceR max
(Uce0 max)

Ucb0 max

Ueb0 max

Рcmax
(Рc. Т.max)

h21E

Uce
sat.

IcbО

IebО

IceR

f l.

Сc

Сe

А

А

V

V

V

W

V

МHz

pF

pF

°С

°С

2Т880А

p-n-p

2

4

100

100

4,5

0,8 (5)

80...250

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

2Т880B

p-n-p

2

4

80

80

4,5

0,8 (5)

80...250

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

2Т880V

p-n-p

2

4

50

50

4,5

0,8 (5)

80...250

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

2Т880G

p-n-p

2

4

100

100

4,5

0,8 (5)

40…160

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

2Т880D

p-n-p

2

4

80

80

4,5

0,8 (5)

40…350

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

2Т880А-5

p-n-p

2

4

100

100

4,5

0,8 (5)

80...250

<0,35

<0,2

<1

<0,5

>30

<200

<900

150

-60…+125

You can order 2T880B from us