Transistors
2T881G are silicon epitaxial-planar universal transistors with n-p-n structure.
Transistors 2T881G are designed for application in amplifying and switching devices.
Transistors 2T881A, 2T881B, 2T881G, 2T881V are produced in metal casing with glass insulators and flexible lead-outs.
Transistor weight in metal casing is maximum 2 g.
Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.644 ТU.
Technical characteristics of transistors 2Т881А, 2Т881B, 2Т881V, 2Т881G, 2Т881А-5, 2Т881G-5:
| Transistor type | Structure | Maximum values of parameters at Тp=25°С | Значения параметров при Тп=25°С | Tp | Т | ||||||||||||
| Ic | Ic. i. | UceR max | Ucb0 max | Ueb0 max | Рcmax | h21E | Uce | IcbО | IebО | IceR | f l. | Сc | Сe | ||||
| А | А | V | V | V | W | V | mА | mА | mА | МHz | pF | pF | °С | °С | |||
| 2Т881А | n-p-n | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 80…250 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т881B | n-p-n | 2 | 4 | 80 | 80 | 4,5 | 0,8 (5) | 80…250 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т881V | n-p-n | 2 | 4 | 50 | 50 | 4,5 | 0,8 (5) | 80…250 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т881G | n-p-n | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 40…160 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т881А-5 | n-p-n | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 80…250 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
| 2Т881G-5 | n-p-n | 2 | 4 | 100 | 100 | 4,5 | 0,8 (5) | 40…160 | <0,35 | <0,2 | - | <0,5 | >30 | <200 | <900 | 150 | -60…+125 |
