Home  /  Products  /  Transistors  /  2T881G

2T881G

Transistors 2T881G

Transistors

2T881G are silicon epitaxial-planar universal transistors with n-p-n structure.

Transistors 2T881G are designed for application in amplifying and switching devices.

Transistors 2T881A, 2T881B, 2T881G, 2T881V are produced in metal casing with glass insulators and flexible lead-outs.

Transistor weight in metal casing is maximum 2 g.
Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.644 ТU.

Technical characteristics of transistors 2Т881А, 2Т881B, 2Т881V, 2Т881G, 2Т881А-5, 2Т881G-5:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Значения параметров при Тп=25°С

Tp
max

Т
max

Ic
max

Ic. i.
max

UceR max
(Uce0 max)

Ucb0 max

Ueb0 max

Рcmax
(РC. Т.max)

h21E

Uce
sat.

IcbО

IebО

IceR

f l.

Сc

Сe

А

А

V

V

V

W

V

МHz

pF

pF

°С

°С

2Т881А

n-p-n

2

4

100

100

4,5

0,8 (5)

80…250

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

2Т881B

n-p-n

2

4

80

80

4,5

0,8 (5)

80…250

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

2Т881V

n-p-n

2

4

50

50

4,5

0,8 (5)

80…250

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

2Т881G

n-p-n

2

4

100

100

4,5

0,8 (5)

40…160

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

2Т881А-5

n-p-n

2

4

100

100

4,5

0,8 (5)

80…250

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

2Т881G-5

n-p-n

2

4

100

100

4,5

0,8 (5)

40…160

<0,35

<0,2

-

<0,5

>30

<200

<900

150

-60…+125

You can order 2T881G from us