MP20

Transistors

Transistors MP20 are germanium, alloy-type, switching, low frequency, low wattage with p-n-p structure.
Transistors are designed for application in switching arrangements.
Transistors are produced in metal-glass casing with flexible leads.

Transistor weight, maximum 2g.

Basic technical characteristics of transistors MP20:
• transistor structure: p-n-p
• Рk max – constant dissipated power of collector: 150 mW;
• fh21б– maximum frequency of current conducting coefficient for common emitter and common base circuits: minimum 2 МHz;
• Ukbоdis – discharge voltage collector-base at given reverse current of collector and open circuit of emitter: 30 V;
• Uebоdis - discharge voltage emitter-base at given reverse current of emitter and open circuit of collector: 50 V;
• Ik and max – maximum pulse current of collector: 300 mА;
• Ikbо– reverse current of collector: maximum 50 mcА;
• h21e – static coefficient of current transmitting of transistor in small signal mode for common emitter and common base circuits correspondingly: 50...150;
• Rke sat – saturation resistance between collector and emitter: maximum 1 Оm

Technical characteristics of transistors MP20, MP20B: