Transistors MP21B are germanium alloy with p-n-p structure, switching, low frequency and low power.
Transistors are designed for application in switching circuits.
Transistors are produced in metal-glass casing with flexible lead-outs.
Transistor weight – maximum 2g.
Technical characteristics of transistors MP21, MP21А, MP21B, MP21V, MP21G, MP21D, MP21Е:
Transistor type | Structure | Maximum values of parameters at Тp=25°С | Values of parameters at Тp=25°С | |||||||||
Ic. max | Ic. i. max | UceR max | Uebo max | Рc. max | h21e | Ucb | Ie | Uce sat | Icbo | fgr. | ||
mA | mA | V | V | mVt | V | mA | V | mcA | MHz | |||
МП21 | p-n-p | 100 | 300 | 35 | 50 | 150 | 20...60 | 5 | 25 | 0,3 | 50 | 1 |
МП21А | p-n-p | 100 | 300 | 35 | 50 | 150 | 50...150 | 5 | 25 | 0,3 | 50 | 1 |
МП21B | p-n-p | 100 | 300 | 40 | 50 | 150 | 20...80 | 5 | 25 | 0,3 | 50 | 0,5 |
МП21V | p-n-p | 100 | 300 | 40 | 50 | 150 | 20…100 | 5 | 25 | 0,3 | 50 | 1,5 |
МП21G | p-n-p | 100 | 300 | 60 | 50 | 150 | 20...80 | 5 | 25 | 0,3 | 50 | 1 |
МП21D | p-n-p | 100 | 300 | 60 | 50 | 150 | 60…200 | 5 | 25 | 0,3 | 50 | 0,7 |
МП21Е | p-n-p | 100 | 300 | 70 | 50 | 150 | 30…150 | 5 | 25 | 0,3 | 50 | 0,7 |