Transistors P210А OS are germanium alloy.
Transistors are designed for use in switching devices, low frequency amplifier output stage, direct voltage converters.
Transistors are produced in metal-glass casing with stiff lead-outs.
Transistor weight, maximum 37g with lead-outs points and 48.5g with mounting flange.
Technical conditions SHM3.365.037 ТU.
Technical characteristics of transistors P210, P210А, P210B, P210V, P210SH:
| Transistor type | Structure | Parameters limits at Тp=25°С | Parameter values at Тp=25°С | Tp | Т | ||||||||||||
| IК | IК. i. | UКeR max | Ukb0 max | Ueb0 max | Rkmax | h21E | Uke | IkbО | IebО | f gr. | KSH | SK | SE | ||||
| А | А | V | V | V | W | V | mcА | mcА | MHz | dB | pF | pF | °С | °С | |||
| P210 | p-n-p | 12 | - | (60) | 65 | 25 | (60) | >15 | - | 12 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210А | p-n-p | 12 | - | (65) | 65 | 25 | (60) | >15 | - | 8 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210B | p-n-p | 12 | - | - | 65 | 25 | (45) | >10 | - | 15 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210V | p-n-p | 12 | - | - | 45 | 25 | (45) | >10 | - | 15 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210SH | p-n-p | 12 | - | (64) | - | 25 | (60) | >15 | - | 8 | - | 0,1 | - | - | - | 85 | -60…+70 |
Reference designation of electric parameters of transistors:
•Ikmax- maximum allowable direct current of transistor collector.
•Ik.И.max- maximum allowable pulse current of transistor collector.
•UkeR max– maximum voltage between collector and emitter at target current of collector and resistance in resistance in base-emitter circuit.
•Uke0 max– maximum voltage between collector and transistor emitter at target collector current and base current, equal zero.
•Ukb0 max– maximum voltage collector-base at target collector current and emitter current, equal zero.
•Ueb0 max– maximum allowable direct voltage emitter-base at collector current, equal zero.
•Рkmax- maximum allowable constant power, dissipated on transistor collector.
•Рk.Т.max– maximum allowable constant power, dissipated on transistor collector with heatsink.
•h21E– static coefficient of current transfer of bipolar transistor.
•Uke– saturation voltage between collector and emitter of transistor.
•Ikbo- collector reverse current.
•Iebo- emitter reverse current.
•f gr– cut-off frequency of coefficient of current transfer.
•KSH– transistornoisecoefficient.
•SK– collector transition capacitance.
•SE– collector transition capacitance.
•Тpmax– maximum allowable transition temperature.
•Тmax– environment maximum allowable temperature.
