Transistors P215 germanium alloy with p-n-p structure.
P215 are designed for application in switching devices, amplifiers output stages of low frequency, constant voltage reducers.
Transistors are produced in metal-glass casing with stiff lead-outs.
Device type marked on casing.
Transistor maximum weight – 12.5 g, mounting flange – 4.5 g.
Basic technical characteristics of transistors P215:
• Transistor structure: p-n-p
• Рктmax – Constant dissipated power of collector with heatsink: 10 Вт;
• fh21e – Maximum frequency of current transmitting for common emitter circuits: minimum 0,15 MHz;
• Ucbr br – Breaking voltage collector – base at given current and emitter open circuit: 80 V;
• Uebr br – Breaking voltage emitter – base at given reverse current of emitter and collector open circuit: 15 V;
• Ic max – Maximum direct current of collector: 5 А;
• Icr – Collector reverse current - maximum 0,3 mА;
• h21E – Static coefficient of current transmitting for common emitter circuit: 20... 150;
• Rce sat – Saturation resistance between collector and emitter: maximum 0,3 Om
