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P30

P30

Low-frequency low-power germanium alloy p-n-p transistor for switching circuits.

Case type: metal-glass with flexible terminals

Mass not more than 2 g.

Electrical parameters

Current transfer coefficient cut-off frequency (at UCB = 6 V, IE = 1 mA), not less than, MHz

10

Feedback circuit time constant (at UCB = 6 V, IE = 1 mA, f = 5 MHz), not more than, ns

6

Static current transfer coefficient (at UCB = 0.5 V, IE = 20 mA)

at 19.85 oC

at 69.85 oC

80..180

80..360

Collector-to-emitter saturation voltage (at IC = 20 mA, IB = 0.5 mA), not more than, V

0.2

Base-to-emitter saturation voltage (at IC = 20 mA, IB = 0.5 mA), not more than, V

0.35

Collector reverse current (at UCB = 12 V), not more than, mkA

at 19.85 oC

at 69.85 oC

4

120

Emitter reverse current (at 19.85 oC, UEB = 12 V), not more than, mkA

4

Collector junction capacitance (at UCB = 6 V), not more than, pF

20

Operational limits

Collector-to-emitter constant voltage (at UCB = 0), V

at -60.15..19.85 oC

at 69.85 oC

10

6

Collector-to-base impulse voltage, V

12

Collector-to-emitter impulse voltage, V

12

Emitter-to-base impulse voltage, V

12

Collector impulse current, mA

100

Emitter impulse current, mA

100

Constant power dissipation, mW

30

Ambient air temperature, oC

-60.15..69.85


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