P30
Low-frequency low-power germanium alloy p-n-p transistor for switching circuits.
Case type: metal-glass with flexible terminals
Mass not more than 2 g.
Electrical parameters
Current transfer coefficient cut-off frequency (at UCB = 6 V, IE = 1 mA), not less than, MHz | 10 |
Feedback circuit time constant (at UCB = 6 V, IE = 1 mA, f = 5 MHz), not more than, ns | 6 |
Static current transfer coefficient (at UCB = 0.5 V, IE = 20 mA) at 19.85 oC at 69.85 oC | 80..180 80..360 |
Collector-to-emitter saturation voltage (at IC = 20 mA, IB = 0.5 mA), not more than, V | 0.2 |
Base-to-emitter saturation voltage (at IC = 20 mA, IB = 0.5 mA), not more than, V | 0.35 |
Collector reverse current (at UCB = 12 V), not more than, mkA at 19.85 oC at 69.85 oC | 4 120 |
Emitter reverse current (at 19.85 oC, UEB = 12 V), not more than, mkA | 4 |
Collector junction capacitance (at UCB = 6 V), not more than, pF | 20 |
Operational limits
Collector-to-emitter constant voltage (at UCB = 0), V at -60.15..19.85 oC at 69.85 oC | 10 6 |
Collector-to-base impulse voltage, V | 12 |
Collector-to-emitter impulse voltage, V | 12 |
Emitter-to-base impulse voltage, V | 12 |
Collector impulse current, mA | 100 |
Emitter impulse current, mA | 100 |
Constant power dissipation, mW | 30 |
Ambient air temperature, oC | -60.15..69.85 |