P217

Transistors

Transistors P217 are utility germanium alloy with p-n-p structure.
Transistors are designed for application in switching devices, output stages of low frequency amplifiers, constant voltage decoders.
Transistors are produced in metal-glass case with stiff leads.
Device type marked on casing.
Transistor maximum weight 12,5 g, mounting flange maximum weight 4,5 g.

Basic technical characteristics of transistors P217:
• Transistor structure: p-n-p
• Рc t max – Constant dissipated power of collector with heatsink: 30 Vt;
• fh21e – Maximum frequency of current transmitting coefficient for circuits with common emitter: minimum 0,1 MHz;
• Ucbоbr – Breaking voltage collector-base at given current of collector and emitter open circuit: 60 V;
• Uebоbr – Breaking voltage emitter-base at given reverse current of emitter and open circuit of collector: 15 V;
• Ic max – Maximum direct current of collector: 7,5 А;
• Icbо– Collector reverse current: maximum 0,5 mА;
• h21e – Static coefficient of current transmitting in small signal mode for circuits with common emitter: over15;
• Rce sat – Saturation resistance between collector and emitter: maximum 0,5 Om

Technical characteristics of transistors P217, P217А, P217B, P217V, P217G: