Transistors P307V are silicon planar n-p-n switching low frequency low power.
Transistors are designed for application in switching circuits and constant voltage converters.
Transistors are produced in metal glass case with flexible lead-outs.
Transistor maximum weight 2 g.
Technical characteristics of transistors P307, P307А, P307B, P307V, P307G:
Transistor type | Structure | Maximum values of parameters at Тp=25°С | Values of parameters at Тp=25°С | ||||||||||
Ic. max | Ic. i. max | Ucbomax | UceR max | Uebo max | Рc. max | h21e | Ucb | Ie | Ucesat | Icbo | fgr. | ||
mA | mA | V | V | V | mVt | V | mA | V | mcA | MHz | |||
P307 | n-p-n | 30 | 120 | 80 | 80 | 3 | 250 | 16...50 | 20 | 10 | - | 3 | 20 |
P307А | n-p-n | 30 | 120 | 80 | 80 | 3 | 250 | 30...90 | 20 | 10 | - | 3 | 20 |
P307B | n-p-n | 15 | 120 | 80 | 80 | 3 | 250 | 50…150 | 20 | 10 | - | 3 | 20 |
P307V | n-p-n | 30 | 120 | 60 | 60 | 3 | 250 | 50…150 | 20 | 10 | - | 3 | 20 |
P307G | n-p-n | 15 | 120 | 80 | 80 | 3 | 250 | 16…50 | 20 | 10 | - | 3 | 20 |